View 2SK4092-A_1198832.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4092
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4092 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
* Low on-state resistance RDS(on) = 0.4 MAX. (VGS = 10 V, ID = 10 A) * Low gate charge QG = 50 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 21 A) * Gate voltage rating: 30 V * Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER 2SK4092-A
Note
LEAD PLATING Sn-Ag-Cu
PACKING 100 p/package
PACKAGE TO-3P (MP-88) typ. 5.0 g
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
(TO-3P) 600 30 21 60 200 3 150 -55 to +150 21 29.4 V V A A W W C C A mJ
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 150 V, RG = 25 , VGS = 20 0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D18776EJ1V0DS00 (1st edition) Date Published May 2007 NS Printed in Japan
2007
2SK4092
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD
TEST CONDITIONS VDS = 600 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 10 A VGS = 10 V, ID = 10 A VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 150 V, ID = 10 A, VGS = 10 V, RG = 10
MIN.
TYP.
MAX. 10 100
UNIT
A
nA V S
2.5 4.0
3.0
3.5
Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
0.34 3240 550 3 38 15 58 12
0.4
pF pF pF ns ns ns ns nC nC nC
VDD = 450 V, VGS = 10 V, ID = 21 A IF = 21 A, VGS = 0 V IF = 21 A, VGS = 0 V, di/dt = 100 A/s
50 24 17 0.9 480 6000 1.5
VF(S-D) trr Qrr
V ns nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V BVDSS VDS VGS 0 Starting Tch = 1 s Duty Cycle 1% VDS
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
L VDD PG.
D.U.T. RL VGS VGS RG
Wave Form
50
0
10%
VGS
90%
VDD VDS
90% 90% 10% 10%
IAS ID VDD
VDS
0
td(on) ton
tr
td(off) toff
tf
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA 50 RL VDD
PG.
2
Data Sheet D18776EJ1V0DS
2SK4092
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
120 250
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
dT - Percentage of Rated Power - %
100 80 60 40 20 0 0 25 50 75 100 125 150
PT - Total Power Dissipation - W
200 150 100 50 0 0 25 50 75 100 125 150
Tch - Channel Temperature - C FORWARD BIAS SAFE OPERATING AREA
1000 100
ID(DC) ID(pulse)
PW
TC - Case Temperature - C
=1
i
ID - Drain Current - A
00
s
10 1 0.1 0.01 0.001 1
ed imit )L ) ( on RD S = 1i 0 V S (V G
1i m
i
s
w Po D er is si
1i 0 m
i
s
t io pa n d it e m Li
TC = 25C Single Pulse
10
100
1000
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - C/W
100
Rth(ch-A) = 41.67C/Wi
10
1
Rth(ch-C) = 0.625C/Wi
0.1 Single Pulse 0.01
100 1m 10 m 100 m 1 PW - Pulse Width - s 10 100 1000
Data Sheet D18776EJ1V0DS
3
2SK4092
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
50 VGS = 20 V 40
ID - Drain Current - A ID - Drain Current - A
100
VDS = 10 V Pulsed
10
30 20 10
10 V
1
0.1
Tch = -55C -25C 25C 75C 125C 150C
Pulsed 0 0 10 20 30 40 50
VDS - Drain to Source Voltage - V
0.01 0 5 10 15
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cut-off Voltage - V | yfs | - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
5 4 3 2 1 0 -75 -25 25 75 125 175
Tch - Channel Temperature - C
100 VDS = 10 V Pulsed 10 Tch = -55C -25C 25C
1
75C 125C 150C
0.1
VDS = 10 V ID = 1 mA
0.01 0.01
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - RDS(on) - Drain to Source On-state Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
2
Pulsed
2 Pulsed 1.5
1.5
1
1 VGS = 10 V 0.5 20 V 0 0.1 1 10 100
ID - Drain Current - A
0.5
ID = 21 A 10 A
0 0 5 10 15 20
VGS - Gate to Source Voltage - V
4
Data Sheet D18776EJ1V0DS
2SK4092
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance -
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
2
Ciss, Coss, Crss - Capacitance - pF
10000
VGS = 10 V Pulsed 1.5
1000 100 10 1 0.1
Ciss
1
Coss
ID = 21 A
0.5
10 A
VGS = 0 V f = 1 MHz 0.1 1 10
Crss
0 -75 -25 25 75 125 175
Tch - Channel Temperature - C
100
1000
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
600 12 10 VGS 8 6 4 VDS 2 ID = 21 A 0 0 10 20 30 40 50 60
td(on), tr, td(off), tf - Switching Time - ns
VDS - Drain to Source Voltage - V
tf 100 td(on) tr 10 VDD = 150 V VGS = 10 V RG = 10 1 0.1 1 10 100 td(off)
500 400 300 200 100 0
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT
100
IF - Diode Forward Current - A trr - Reverse Recovery Time - ns
1000
10 VGS = 10 V 1 0V 0.1 Pulsed 0.01 0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
100
di/dt = 100 A/s VGS = 0 V 10 0.1 1 10 100
IF - Diode Forward Current - A
Data Sheet D18776EJ1V0DS
5
VGS - Gate to Source Voltage - V
VDD = 450 V 300 V 150 V
2SK4092
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY DERATING FACTOR
100
IAS - Single Avalanche Current - A Energy Derating Factor - %
120 100 80 60 40 20 0
IAS = 21 A
EA
VDD = 150 V RG = 25 VGS = 20 0 V IAS 21 A
10 VDD = 150 V RG = 25 VGS = 20 0 V Starting Tch = 25C 1 0.01 0.1
S
=2 9.4
mJ
1
10
25
50
75
100
125
150
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D18776EJ1V0DS
2SK4092
PACKAGE DRAWING (Unit: mm)
TO-3P (MP-88)
1.0 TYP.
15.7 MAX.
3.20.2
4
4.50.2
4.7 MAX. 1.5 TYP.
6.0 TYP.
20.00.25
5.0 TYP.
1
2
3
19 MIN.
3.00.25
2.20.2 5.45 TYP.
1.00.2 5.45 TYP.
0.60.1 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.1
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
Data Sheet D18776EJ1V0DS
7
2SK4092
* The information in this document is current as of May, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

▲Up To Search▲

Price & Availability of 2SK4092-A

	To Download 2SK4092-A Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .